CMOS ASIC Design of Multi-frequency Multi-constellation GNSS Front-ends

With the emergence of the new global navigation satellite systems (GNSSs) such as Galileo, COMPASS and GLONASS, the US Global Positioning System (GPS) has new competitors. This multiplicity of constellations will offer new services and a much better satellite coverage. Public regulated service (PRS) is one of these new services that Galileo, the first global positioning service under civilian control, will offers. The PRS is a proprietary encrypted navigation designed to be more reliable and robust against jamming and provides premium quality in terms of position and timing and continuity of service, but it requires the use of FEs with extended capabilities. The project that this thesis starts from, aims to develop a dual frequency (E1 and E6) PRS receiver with a focus on a solution for professional applications that combines affordability and robustness. To limit the production cost, the choice of a monolithic design in a multi-purpose 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology have been selected, and to reduce the susceptibility to interference, the targeted receiver is composed of two independent FEs. The first ASIC described here is such FEs bundle. Each FE is composed of a radio frequency (RF) chain that includes a low-noise amplifier (LNA), a quadrature mixer, a frequency synthesizer (FS), two intermediate frequency (IF) filters, two variable-gain amplifiers (VGAs) and two 6-bit flash analog-to-digital converters (ADCs). Each have an IF bandwidth of 50 MHz to accommodate the wide-band PRS signals. The FE achieves a 30 dB of dynamic gain control at each channel. The complete receivers occupies a die area of 11.5 mm2 while consuming 115 mW from a supply of a 1.8 V. The second ASIC that targets civilian applications, is a reconfigurable single-channel FE that permits to exploit the interoperability among GNSSs. The FE can operate in two modes: a ¿narrow-band mode¿, dedicated to Beidou-B1 with an IF bandwidth of 8 MHz, and a ¿wide-band mode¿ with an IF bandwidth of 23 MHz, which can accommodate simultaneous reception of Beidou-B1/GPS-L1/Galileo-E1. These two modes consumes respectively 22.85 mA and 28.45 mA from a 1.8 V supply. Developed with the best linearity in mind, the FE shows very good linearity with an input-referred 1 dB compression point (IP1dB) of better than -27.6 dBm. The FE gain is stepwise flexible from 39 dB and to a maximum of 58 dB. The complete FE occupies a die area of only 2.6 mm2 in a 0.18 µm CMOS. To also accommodate the wide-band PRS signals in the IF section of the FE, a highly selective wide-tuning-range 4th-order Gm-C elliptic low-pass filter is used. It features an innovative continuous tuning circuit that adjusts the bias current of the Gm cell¿s input stage to control the cutoff frequency. With this circuit, the power consumption is proportional to the cutoff frequency thus the power efficiency is achieved while keeping the linearity near constant. Thanks to a Gm switching technique, which permit to keep the signal path switchless, the filter shows an extended tuning of the cutoff frequency that covers continuously a range from 7.4 MHz to 27.4 MHz. Moreover the abrupt roll-off of up to 66 dB/octave, can mitigate out-of-band interference. The filter consumes 2.1 mA and 7.5 mA at its lowest and highest cutoff frequencies respectively, and its active area occupies, 0.23 mm2. It achieves a high input-referred third-order intercept point (IIP3) of up to -1.3 dBVRMS.

SOI mixed-mode design techniques and case studies

Marija Blagojevic

Since the emergence of Silicon On Insulator (SOI) technology the research activities have been concentrated on a detailed analysis of SOI devices and their use in different application fields (low-voltage, low-power circuits, high temperature electronics, digital circuits, etc.). The present thesis deals with low-voltage, low-power mixed-mode design using a SOI technology. The goal is to establish the concepts that allow one to design SOI mixed-mode circuits, and to apply these concepts to the design of fully depleted (FD) and partially depleted (PD) SOI circuits and systems. Two studies have been realized in the scope of this work: a Hall sensor based microsystem design using an experimental FD SOI technology a DRAM design using capacitor-less 1T floating-body PD SOI memory cells. At the beginning of this thesis, two major types of SOI devices are introduced, namely FD and PD devices. The most important properties of these devices are then presented and compared to those of CMOS bulk devices. A design methodology based on design retargeting from bulk to SOI technology is further proposed. This methodology is developed with the aim of being implemented for the design of FD SOI circuits. It consists in using the same device dimensions and bias currents for the bulk and the corresponding FD SOI design. The analysis performed proves that such an approach permits one to obtain better circuit performances using the FD SOI technology. The EKV model is chosen for Spice simulations. For that purpose the extraction of the EKV intrinsic parameters has been performed for the experimental 0.5 μm FD SOI technology. The EKV model card obtained from transistor measurements is implemented straightforwardly for circuit simulations. The first study presented in this thesis is an FD SOI Hall sensor front-end for energy measurement. The mixed-mode microsystem design is completely based on the proposed design methodology. The system level solutions are also included, such as the spinning-current method that serves for reduction of the offset and low frequency noise of the analog front-end, and a high resolution analog-to-digital conversion technique. The integrated microsystem is entirely functional. Furthermore, according to the existing literature, this integrated circuit is the first microsystem completely realized using FD SOI technology. The overall system error that is obtained is less than 1.5 %. During the second part of this work, a novel sensing scheme that exploits an automatic reference generation based on successive approximations has been developed for the PD SOI capacitor-less 1T DRAM. The 1T DRAM reference current is generated by an adjustable current source. The electrical calibration of the reference current is performed using a digital-to-analog converter and successive approximations algorithm. The proposed scheme is evaluated in a 2 kb test chip. The circuit integrated using PD SOI technology contains a 2 kb 1T memory array, as well as automatic reference generators and peripheral circuits. The automatic reference generator comprises current mode sense amplifier, M/3M converter, and successive approximations register. All blocks implemented in the test chip are described in detail, and PD SOI design issues are discussed. A number of experimental results demonstrate the potential of the PD SOI 1T DRAM for future embedded DRAM applications. The measured retention time under holding conditions is higher than 1s. In the continuous read mode, a few hundreds of the read cycles can be performed without a refresh operation. The test chip has a measured access time of 25 ns with a read cycle time of 70 ns.

EPFL2005

Realization of the Conscience Mechanism in CMOS Implementation of Winner-Takes-All Self-Organizing Neural Networks

Rafal Tomasz Dlugosz

This paper presents a complementary metal–oxide– semiconductor (CMOS) implementation of a conscience mechanism used to improve the effectiveness of learning in the winnertakes- all (WTA) artificial neural networks (ANNs) realized at the transistor level. This mechanism makes it possible to eliminate the effect of the so-called “dead neurons,” which do not take part in the learning phase competition. These neurons usually have a detrimental effect on the network performance, increasing the quantization error. The proposed mechanism comes as part of the analog implementation of the WTA neural networks (NNs) designed for applications to ultralow power portable diagnostic devices for online analysis of ECGbiomedical signals. The study presents Matlab simulations of the network’s model, discusses postlayout circuit level simulations and includes results of measurement completed for the physical realization of the circuit.

Institute of Electrical and Electronics Engineers2010

SOI mixed-mode design techniques and case studies

Marija Blagojevic

EPFL2005