Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope
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Using angle-resolved photoemission spectroscopy (ARPES), it is revealed that the low-energy electronic excitation spectra of highly underdoped superconducting and nonsuperconducting La2-xSrxCuO4 cuprates are gapped along the entire underlying Fermi surface ...
In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (Complementary Metal-Oxide-Semiconductor) technology, trying to follow as much as possible the empirical Moore's Law. In the last five years this trend has be ...
High-temperature superconductivity in copper oxides arises when a parent insulator compound is doped beyond some critical concentration; what exactly happens at this superconductor–insulator transition is a key open question1. The cleanest approach is to t ...
RF microelectromechanical systems (MEMS) capacitive switches for two different dielectrics, aluminum nitride (AlN) and silicon nitride (Si3N4), are presented. The switches have been characterized and compared in terms of DC and RF performance (5-40 GHz). S ...
This thesis presents the results of a concerted effort to understand the complex array of physical properties exhibited by the BaVS3 family of materials. As a 3d1 system, BaVS3 displays a unique collection of correlation-driven phenomena, including a metal ...
A magnetic field sensor for measuring a direction of a magnetic field in a plane comprises a sensing structure (4) comprising a ring-shaped well (10), a plurality of contacts (11) of equal size placed at equal distance from each other along the ring-shaped ...
The hydrogen response of gas-sensitive field-effect devices is mainly due to trapping of atomic hydrogen on the insulator side of the metal-insulator interface of the metal-insulator-semiconductor (MIS) structure. Therefore an influence of the choice of in ...
The transient optical conductivity of photoexcited 1T-TaS2 is determined over a three-order-of-magnitude frequency range. Prompt collapse and recovery of the Mott gap is observed. However, we find important differences between this transient metallic state ...
The quasi-one-dimensional metallic system BaVS3 with a metal-insulator transition at T-MI=70 K shows large changes in the optical phonon spectrum, a central peak, and an electronic Raman scattering continuum that evolve in a three-step process. Motivated b ...
Colossal magnetoresistance (CMR) and colossal electroresistance (CER) induced by the electric field in spinel multiferroic CdCr2S4 are reported. It is found that a metal-insulator transition in CdCr2S4 is triggered by the electrical field. In magnetic fiel ...