Plasmonic nanohole arrays on Si-Ge heterostructures: An approach for integrated biosensors
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GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm ...
We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed pho ...
Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposi ...
Thin Film on ASIC (TFA) technology combines advantages of two commonly used pixel imaging detectors, namely, Monolithic Active Pixels (MAPs) and Hybrid Pixel detectors. Thanks to direct deposition of a hydrogenated amorphous silicon (a- Si:H) sensor lm on ...
This paper addresses the challenges and opportunities offered by post-CMOS devices in terms of new functionality and ultra low power. It focuses on the illustration of: (i) the quest for the new electronic abrupt switches (tunnel-FET and IMOS/PIMOS) and (i ...
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Highly sensitive photodetectors for the mid-infrared have recently been obtained by placing a photodiode inside a Fabry-Pérot cavity (Arnold et al 2005 Appl. Phys. Lett. 87 141103). These resonant cavity enhanced detectors (RCED) are sensitive at the res ...
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
The perovskite SrHfO3 can be a potential candidate among the high-permittivity materials for gate oxide replacement in future metal-oxide semiconductor field-effect transistor technology. Thin films of SrHfO3 were grown by molecular beam epitaxy and compar ...
A fully integrated nanoelectromechanical system (NEMS) resonator together with a compact built-in complementary metal-oxide-semiconductor (CMOS) interfacing circuitry is presented. The proposed low-power second generation current conveyor circuit allows me ...
In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semicon ...
