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Aluminium metallisation for interdigitated back-contact silicon heterojunction solar cells

Publications associées (41)

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Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024

Localisation of front side passivating contacts for direct metallisation of high-efficiency c-Si solar cells

Christophe Ballif, Franz-Josef Haug, Xavier Niquille, Andrea Ingenito, Sylvain Nicolay, Frank Meyer

In this work, we present the development of passivating contacts based on thin interfacial oxide/doped polysilicon for two side contacted c-Si solar cells. In the first part, we discuss our layer optimization towards direct metallisation, using firing thro ...

ELSEVIER2022

Electrical Losses Mitigation in Silicon Heterojunction Solar Cells

Laurie-Lou Senaud

To overcome the worldwide challenges of climate change, photovoltaics is foreseen to play a significant role in the world electricity production. Nowadays, single junction crystalline silicon (c-Si) based solar cells hold the largest share of the global ph ...

EPFL2021

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In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. In addition to an interfacial silicon oxide (SiOx) and an in-s ...

2020

Optimized Module Packaging for Silicon Heterojunction Solar Cells and Increased PID Resistance

Recent studies showed that silicon heterojunction (SHJ) solar cells can be prone to potential induced degradation (PID) when encapsulated with a low volume resistivity ethylene vinyl acetate (EVA). We perform PID test in humid conditions (85°C/85% RH) on g ...

EU PVSEC Proceedings2020

Development of Highly Efficient Perovskite-on-Silicon Tandem Solar Cells

Florent Sahli

Crystalline Silicon (c-Si) solar cells are dominating the photovoltaic (PV) market. Owing to their large manufacturing capacity, reliability and efficiency, c-Si solar cells are now cost-competitive with other non-renewable electricity sources in many plac ...

EPFL2020

Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge of increasing energy demand in times of global warming. The world PV market is currently dominated by the homo-junction crystalline silicon (c-Si) PV technology based ...

2020

Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

Mathieu Gérard Boccard

Passivation, conductivity, and selectivity are often acknowledged as the three requirements for optimal contacts to photovoltaic solar cells. Although there are generally accepted definitions and metrics for passivation and conductivity, a common understan ...

2019

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

Solar photovoltaic module

Christophe Ballif, Franz-Josef Haug, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger

In the present invention a new solar photovoltaic module is proposed comprising a solar cell comprising a silicon layer having a first (1 a) surface and a second surface (1a) opposite to said first surface. The solar cell further comprises a passivating la ...

2017