Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
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Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency ...
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The compensation of the dangling-bond space charge in amorphous silicon p-i-n solar cells by graded, low-level doping in the intrinsic layer is discussed and demonstrated experimentally. Carrier collection in p-i-n cells without doping indicates that the d ...
Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V ...
Annealing in excess arsenic vapor at 650-degrees-C introduces thermal conversion of n-type Si-doped GaAs samples (n = 1.3 X 10(18) cm-3) into p type. The observations are made by current-voltage and electron-beam induced current measurements. The donor con ...
