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One challenge for microcrystalline silicon (mu c-Si:H) deposition is to achieve high deposition rates while maintaining high quality films. In this work, an inductively-coupled plasma (ICP) is used to deposit mu c-Si:H on glass substrates by means of a novel planar resonant antenna at 13.56 MHz. No particle formation occurs in the low pressure (5 Pa) plasma, but the films suffer post-oxidation. By embedding a 5 MHz RF-biased substrate, films deposited simultaneously with and without RF bias are compared. It is shown that large area, low pressure (5 Pa), particle-free ICP deposition at 1 nm/s of mu c-Si:H films can be obtained without post-oxidation by means of a planar resonant antenna, provided that RF substrate bias is included for independent control of the ion energy. (C) 2017 Elsevier Ltd. All rights reserved.
Johann Michler, Ivo Utke, Xavier Maeder
Luis Guillermo Villanueva Torrijo, Silvan Stettler, Marco Liffredo, Nan Xu, Federico Peretti