Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
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Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
GaN/AlGaN and InGaN/GaN quantum wells (QWs) are investigated as the active region for room-temperature strong exciton-photon coupling in high-quality AlInN/(Al)GaN microcavities (MCs). Angular resolved photoluminescence (PL) measurements performed on an Al ...
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We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
Localization phenomena related to the fluctuating band potential profile of the InGaN alloy were investigated via hydrostatic pressure dependent measurements of luminescence of an InGaN quantum structure. We examine the suitability of the hydrostatic press ...
The approximative single-band effective mass model for calculating the electronic structure and optical properties of flat quantum dots was introduced. The comparison with more accurate model has shown the applicability of the approximations. The method ha ...
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Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dyn ...
InGaN/GaN single quantum wells (SQWs) are grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The InGaN material quality is optimized through the photoluminescence (PL) properties. It is found that the growth temperature is critical for ...
