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Grain boundaries and quantum transport in monolayer MoS2

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Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Edge-contact MoS2 transistors made by thermal scanning probe lithography

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio

Two-dimensional materials (2DM) have emerged as potential candidates for low power electronics, optoelectronics, and sensing [1]. However, the chemical and physical processes involved in conventional lithography methods, have shown detrimental effects on 2 ...

2021

Extremely large magnetoresistance in the "ordinary" metal ReO3

Oleg Yazyev, Quansheng Wu, Shengnan Zhang, Huancheng Chen

The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS ...

AMER PHYSICAL SOC2021

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Jens Christian Johannsen

The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- ...

ELSEVIER2021

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c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

AMER INST PHYSICS2021

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A comprehensive picture explaining the effect of the crystal size in metal halide perovskite films on their opto-electronic characteristics is currently lacking. We report that perovskite nanocrystallites exhibit a wider band gap due to concurrent quantum ...

WILEY-V C H VERLAG GMBH2021

Nano-emitting Heterostructures Violate Optical Reciprocity and Enable Efficient Photoluminescence in Halide-Segregated Methylammonium-Free Wide Bandgap Perovskites

Christophe Ballif, Quentin Thomas Jeangros, Christian Michael Wolff, Chien-Jen Yang, Peter Joseph Fiala, Pietro Caprioglio

This work investigates halide segregation in methylammonium-free wide bandgap perovskites by photoluminescence quantum yield (PLQY) and advanced electron microscopy techniques. Our study reveals how the formation of nano-emitting low-energy domains embedde ...

AMER CHEMICAL SOC2021

The wave functions of a disordered two-dimensional electron gas at the quantum-critical Anderson transition are predicted to exhibit multifractal scaling in their real space amplitude. We experimentally investigate the appearance of these characteristics i ...

AMER PHYSICAL SOC2021

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We propose Landau levels as a probe for the topological character of electronic bands in two-dimensional moire superlattices. We consider two configurations of twisted double bilayer graphene (TDBG) that have very similar band structures, but show differen ...

AMER PHYSICAL SOC2021

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

Oleg Yazyev, Kristians Cernevics, Michele Pizzochero

We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missin ...

AMER CHEMICAL SOC2021