MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors
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Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...
This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...
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Lattice matched 0.25-mu m gatelength InAlN/GaN high electron mobility transistors are realized in an ultrathin body mesa technology (50-nm AlN nucleation layer/50-nm GaN buffer) on sapphire. At room temperature, the maximum output current density is I-DS = ...
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Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...
Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...
Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work prop ...
