A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology
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For pt. I, see ibid., vol.6, 451 (1974). The light output powers of a semiconductor laser diode within an external cavity and of two optical coupled diodes are evaluated as a function of the system parameters (drive currents and coupling coefficient). A po ...
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A solid-state imager fabricated in CMOS technology is presented for depth information capture of arbitrary 3D objects with millimeter resolution. The system is based on an array of 32x32 pixels that independently measure the time-of-flight of a ray of ligh ...
In this paper we report on a 32×32 optical imager based on single photon avalanche diodes integrated in CMOS technology. The maximum measured dynamic range is 120dB and the minimum noise equivalent intensity is 1.3×-3lx. The minimum integration time per pi ...
