Frequency-dependent decoupling of domain-wall motion and lattice strain in bismuth ferrite
Publications associées (51)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Oxygen octahedra tilting is a common structural phenomenon in perovskites and has been subject of intensive studies, particularly in rhombohedral Pb(Zr,Ti)O3 (PZT). Early reports suggest that the tilted octahedra may strongly affect the domain switching be ...
"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...
Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macrosco ...
PbTiO3 thin films were epitaxially grown on (001) KTaO3 single crystal substrates by metalorganic chemical vapor deposition. The coherent epitaxial growth introduced a large in-plane tensile strain to the PbTiO3 film. This tensile strain increased T-C and ...
Domain walls in ferroic materials have attracted significant interest in recent years, in particular because of the unique properties that can be found in their vicinity(1-3). However, to fully harness their potential as nanoscale functional entities(4,5), ...
The interfaces in complex oxides present unique properties exploitable in nanoscale devices. Recent studies on ferroelectric BiFeO3, BaTiO3, and Pb(Zr, Ti) O-3 have revealed an unusually high electric conductivity of the domain walls (DWs), adding another ...
Recent developments in the physics of non-magnetic ferroics identified possible functionality of domain walls in these materials, which specifies the current interest to the internal structure of the walls. In this context, the wall thickness itself can be ...
Perpetual demand for higher transfer speed and ever increasing miniaturization of radio and microwave telecommunication devices demands new materials with high electrical tunability. We have investigated built in electrical and strain fields' influence on ...
Bismuth ferrite, BiFeO3, is an important multiferroic material that has attracted remarkable attention for potential applications in functional devices. While thin films of BiFeO3 are attractive for applications in nanoelectronics, bulk polycrystalline BiF ...
An essential feature of ferroelectric thin films is the presence in them of domain structures. In order to efficiently implement ferroelectric films into potential new ferroelectrics-based devices, it is of high interest to understand the behaviour of doma ...