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Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Publications associées (41)

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Magnetic memory devices and systems

A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state ...

2014

Ferroelectric translational antiphase boundaries in nonpolar materials

Nava Setter, Alexander Tagantsev, Alexander Kvasov, Xiankui Wei

Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from t ...

2014

A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS

Yusuf Leblebici, Lukas Kull, Thomas Toifl

An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alt ...

Institute of Electrical and Electronics Engineers2013

Power-Efficient Pipelined Analog-to-Digital Converter Architectures for Advanced CMOS Technologies

Among different analog-to-digital converter (ADC) architectures pipelined ADCs are the most suited for medium sampling frequencies (50-300MSPS) and medium resolutions, i.e. 8 to 14 bits. Having the lowest figure-of-merit (FOM) in its bandwidth and resoluti ...

EPFL2012

Lead-free high-temperature dielectrics with wide operational range

Dragan Damjanovic

The dielectric, electrical and structural properties of (1-x) (0.94Bi(1/2)Na(1/2)TiO(3)-0.06BaTiO(3))-xK(0.5)Na(0.5)NbO(3) (BNT-BT-xKNN) with x=0.09, 0.12, 0.15, and 0.18 were investigated as potential candidates for high-temperature capacitors with a work ...

American Institute of Physics2011

Single Phase Resonant LC Circuit Using a Bank of Self-Switched Capacitors

Alfred Rufer, Daniel Siemaszko, Christian Rod

This paper presents a preliminary work on the feeding of an AC dipole using a resonant circuit with a varying resonant frequency. A single phase LC oscillator containing a variable capacitor is fed by a wide band amplifier or a voltage source inverter. For ...

Institute of Electrical and Electronics Engineers2011

Micro-electro-mechanical (MEM) diode switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

Elsevier2009

Polarisation reversal in ferroelectric PVDF and PZT films

Roman Gysel

Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...

EPFL2008

Ferroelectric gate on AlGaN/GaN heterostructures

Lisa Malin

The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...

EPFL2007

Multistacked Al2O3∕HfO2∕SiO2 tunnel layer for high-density nonvolatile memory application

Wei Chen

A memory capacitor with a multistacked tunnel layer of Al2O3/HfO2/SiO2 (AHO) has been fabricated together with HfO2 charge trapping layer and Al2O3 control oxide layer. The resulting capacitor exhibits a memory window as large as 7.6 V for +/- 12 V sweep v ...

American Institute of Physics2007