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The state-of-the-art RF and millimeterwave circuits design requires accurate prediction of the nonquasi-static (NQS) effects at high frequency for all levels of channel inversion. This paper provides a practical insight to help high-frequency performance assessment of ultrathin body and box fully depleted silicon-on-insulator MOSFETs through a powerful frequency normalization scheme. Frequency dependence of small signal characteristics derived from experimental S-parameters is analyzed and reveals that the transconductance efficiency (g(m)/I-D) concept, already adopted as a low-frequency analog figure-of-merit (FoM), can be generalized to high frequency, including under asymmetric operation. We report that the normalized frequency dependence of the generalized transadmittance efficiency (y(m)/I-D) FoM only depends on the mobility and inversion coefficient. In addition, this approach is also used to extract essential parameters such as the critical NQS frequency f(NQS).
Dirk Grundler, Mohammad Hamdi, Ferdinand Rémy Hynek Posva
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