Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
C70(CF3)16 and C70(CF3)18, the first trifluoromethylated fullerene derivatives to comprise a pair of adjacent CF3 groups, have been isolated from a mixture obtained via reaction of C70 with CF3I, characterized in a single crystal XRD study and theoreticall ...
In this thesis we study the interplay between electronic correlations and geometry in single-walled carbon nanotubes by microscopic model calculations. Electronic correlations are expected to be strong because of the low dimensionality of carbon nanotubes. ...
Since the late 1960s, synchrotron-based experimental techniques have been playing a key role in semiconductor research. Major milestones include the observation of intrinsic and extrinsic surface and interface states, the study of interface formation proce ...
Due to the limiting amount of fossil fuel available and to the continuous growth of the world energy consumption, it becomes important to find alternative energy sources. Hydrogen produced by the photoelectrolysis of water is a perfect candidate as a clean ...
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
The static and dynamical properties of heavy water have been studied at ambient conditions with extensive Car-Parrinello molecular-dynamics simulations in the canonical ensemble, with temperatures ranging between 325 and 400 K. Density-functional theory, p ...
The hydrogen response of gas-sensitive field-effect devices is mainly due to trapping of atomic hydrogen on the insulator side of the metal-insulator interface of the metal-insulator-semiconductor (MIS) structure. Therefore an influence of the choice of in ...
We review the structural and hyperfine properties of Si dangling bond defects occurring in amorphous SiO2 and at various Si-SiO2 interfaces. These defects have in common a singly occupied orbital on a, trivalent Si Centre. We first briefly summarize the mo ...
A complete characterization, based on fs pump-probe spectroscopy and mol. dynamics simulations, is presented of the ultrafast dynamics of electronic bubble formation in solid para-H2 upon impulsive excitation of impurity-doped sites, which correlate with t ...
We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 mu m involving transitions from the conduction band ground state to the first ex ...
