Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain
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The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV. New topologies, re ...
Several works suggest the imminent appearance of bidirectional active devices. The promised performances go in the direction of a reverse recovery effects reduction and efficiency improvement. Our purpose is the study of an active management for switches t ...
In this paper we analyse a new type of silicon strain sensor based on the piezo- tunneling effect in a silicon lateral backward diode. The implantation profiles of the junction have been optimised to obtain a prevailing tunneling current at the reverse bia ...
In the transportation field, the empty weight of the vehicle has to be as light as possible in order to have the highest energetic efficiency. For onboard storage electrical systems, dc/dc converters are usually used to control the power flows in the vehic ...
The responses of ion-sensitive FETs (ISFETs) with thermally grown SiO//2 gate regions and of electrolyte-SiO//2-Si (EOS) structures to stepwise changes in the pH were studied. A mechanism is also proposed in which one or other hydrogen-bearing species inte ...
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density ( ...