645 V Quasi-Vertical GaN Power Transistors on silicon substrates
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This work is part of the innovative "Active Generator" (AG) project. AG is a concept that suggests a new arrangement of the turbine-generator line of a high power utility (a few hundred of MW) in order to de-synchronize the rotation speed of the turbine-ge ...
Multilevel voltage source inverters where first introduced in the early 1980s. Since then, they have been continuously developed, offering a wide new research area in power electronics. The popularity of multilevel solutions come from the advantages that t ...
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...
This paper presents a continuous voltage and frequency scaling approach achieving lower transition (both energy and time) overheads implied by changing voltage levels, at a very low power dissipation and silicon area cost for multi-processor systems with i ...
In the last years, static power converters have become widely used in various applications. They can be found in domestic applications, railways, urban and ship transport, and even in several industrial systems. Some of these applications require a high or ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
Making transportation systems more energy efficient is one of the key challenge in this century. This paper presents a solution for increasing the efficiency of an electrical scooter by adding a supercapacitive energy storage in parallel to the original ba ...
Several works suggest the imminent appearance of bidirectional active devices. The promised performances go in the direction of a reverse recovery effects reduction and efficiency improvement. Our purpose is the study of an active management for switches t ...
Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...
This paper is focused on the design, modulation and control of a re-generative non-symmetrical multi-level converter for high-power applications such as oil and gas or mining. The converter is based on standard IGBT modules and the DC-link voltages are cho ...