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Carrier injection from amorphous silicon into crystalline silicon determined with photoluminescence

Publications associées (81)

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Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Christophe Ballif

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...

2007

Novel cantilever design with high control of the mechanical performance

Luis Guillermo Villanueva Torrijo

A novel mechanical structure design with reduced deflection offset is reported. This design offers a batch processing solution to a well-known problem in the fabrication of very thin crystalline silicon structures, that is initial bending due to anchoring ...

2007

Novel cantilever design with high control of the mechanical performance

Luis Guillermo Villanueva Torrijo

2006

Advanced receiver algorithms for MIMO wireless communications

Andreas Peter Burg, Christoph Studer

We describe the VLSI implementation of MIMO detectors that exhibit close-to optimum error-rate performance, but still achieve high throughput at low silicon area. In particular algorithms and VLSI architectures for sphere decoding (SD) and K-best detection ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2006

Effect of the surface charge on ion transport through nanoslits

Philippe Renaud, Harald Van Lintel, Reto Bruno Schoch

A description of ion transport through geometrically defined nanoslits is presented. It is characterized by the effective surface charge density and was obtained by impedance spectroscopy measurements of electrolytes with different physico-chemical propert ...

2005

Dynamic Stencil Deposition

Recent developments are going towards miniaturized devices and structures. Besides advanced photolithography techniques, complementary patterning methods are evolving. Among them is the nanostencil technique. Schematic overview of setup in operation: the s ...

2005

Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique

Arvind Shah, Joël Alexandre Spitznagel

During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called "very high frequency glow discharge (VHF-GD) ...

2004

Atomistic structure of the Si(100)-SiO2 interface: A synthesis of experimental data

Alfredo Pasquarello, Angelo Bongiorno

We construct atomistic models of the Si(100)-SiO2 interface in accord with available experimental data. Combining classical and first-principles simulation methods, we generate transition structures from crystalline silicon to disordered SiO2. The generati ...

2003

We address the rate of O-2 diffusion through the oxide layer at Si-SiO2 interfaces using an atomic-scale approach. In particular, we investigate the combined effect of a percolative diffusion mechanism and of a dense oxide layer located close to the silico ...

2003

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A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or ...

2002