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Doping of epitaxial graphene by direct incorporation of nickel adatoms

Publications associées (46)

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Metal Clusters on Surfaces

Michael Hugentobler

The morphology, stability and reactivity of nanometre-sized particles (Au, Pt) is investigated on three different supports. Gold nanoparticles with a diameter comprised between 4 and 6nm are stabilized in nanosized pits of well defined depth in highly orie ...

EPFL2010

Image potential states as a quantum probe of graphene interfaces

Klaus Kern

Image potential states (IPSs) are electronic states localized in front of a surface in a potential well, formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid, a doub ...

2010

Marker-free on-the-fly fabrication of graphene devices based on fluorescence quenching

Klaus Kern, Kannan Balasubramanian, Adarsh Singh Sagar

Graphene has been dominating the electronic research community recently, with a brisk surge in proposals for its use in novel devices. The aspirations of 2D-carbon-based electronics largely rely on the availability of a mass-production technique to obtain ...

2010

NMR Shifts for Polycyclic Aromatic Hydrocarbons From First-Principles

Nicola Marzari

We present first-principles, density-functional theory calculations of the NMR chemical shifts for polycyclic aromatic hydrocarbons, starting with benzene and increasing sizes up to the one- and two-dimensional infinite limits of graphene ribbons and sheet ...

2009

Spin Channels in Functionalized Graphene Nanoribbons

Nicola Marzari

We characterize the transport of functionalized graphene nanoribbons using extensive first-principles calculations based on density functional theory (DFT) that encompass both monovalent and divalent ligands, hydrogenated defects, and vacancies. We find th ...

2009

Spatial modulation of the Dirac gap in epitaxial graphene

Klaus Kern

We use scanning tunneling spectroscopy (STS) at low temperatures to investigate the local electronic structure of mono- and bilayer graphene grown epitaxially on SiC(0001). Already for monolayer graphene, a gap opening is observed in the pi-bands at the Di ...

2008