Ferroelectric Self-Poling in GeTe Films and Crystals
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Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from alkoxide-based solution precursors. The influence of different seeding layers and chemical solution on the microstructures is shown. Dielectric, electrostrictive, and piezoelectric prope ...
(Al,Ga)N/GaN quantum wells have been studied by temperature-dependent luminescence and reflectivity. The samples were grown by molecular beam epitaxy on (0001) sapphire substrates, and well widths were varied from 3 to 15 monolayers (ML's) with a 2-ML incr ...
The longitudinal d(33) piezoelectric coefficient was studied in rhombohedral Pb(Zr0.6Ti0.4)O-3 thin films with (111), (100), and "random" orientation. The largest d(33) was found in (100)-oriented films and the smallest along the polarization direction in ...
We present an experimental study of the dynamical screening effect of the built-in field in GaN-based quantum well structures by means of picosecond time-resolved luminescence measurements. Our results clearly show that the recombination dynamics of the ph ...
The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...
The effects of niobium doping on the hysteresis parameters of sol-gel Pb-1.1-x/2(Zr0.53Ti0.47)(1-x)NbxO3 (0 < x < 0.05) have been reported fbr two sets of films with analogous grain size and degree of (111) texture but with different surface microstructure ...
The size, shape, and polarization orientation of fatigued areas formed during the suppression of the switchable polarization (P-r(s)) (fatigue) in Ft-FZT-Pt ferroelectric capacitors (FECAPs), were observed by means of atomic force microscopy and by imaging ...
Transient photocurrents are investigated in ferroelectric lead zirconate titanate (PZT) films illuminated by laser pulses in the spectral range of 340-380 nm. At low electric fields, the photocurrent is sensitive to the ferroelectric polarization state and ...
The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...