Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases
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We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...
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Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N ...
We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...
