On Advanced Large-Field Photolithography

The information age we live in today relies on highly integrated devices. They are fabricated with the help of photolithography, the patterning technique at the heart of their production. With the continuous demand for higher integration density to achieve ever growing performance levels, not only the front-end-of-line lithography, responsible for realizing the smallest structures, is under constant pressure for improvements. At the back-end-of-line, where ICs are interfaced, and elements like display panels are structured, this drive can be felt as well. The development here goes towards the processing of substrates of increasing size surpassing the wafer-level to increase throughput, thus becoming large-field photolithography. The current resolution requirements here are typically in the 1 &mto 2 &mfor minimumfeature size. An investigation in phase-space identifies two possibilities for advanced photolithographic systems relying on different exposure mechanics. We combine a novel semiconductor laser light source emitting in the deep ultra-violet at 193 nmwith a beam-shaping system to enable proximity printing with sub-2 &mresolution with a proximity gap of 20 &m. The integration of this approach with optical exposure gapmetrology and a high-precision substrate positioning stage demonstrates the possibility for large-field exposure. In a second approach we realize a highly integrated micro-optical multi-aperture projection lens to pattern an exposure field of 100mmby 100mm. A mechanical scanner to mount the projection lens, required to achieve uniform exposure of the entire field, is realized as well. Projection lens and scanner are integrated with a high-precision substrate positioning stage and a mask aligner illumination system to demonstrate the ability for large-field photolithographic printing. The optical design is validated by demonstrating printedminimumfeature sizes of 2 &m. Practical shortcomings of the system are investigated and strategies to overcome these issues are presented and discussed.

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is generated by the bandgap difference for the two materials (∼ 0.4 eV for InAs, and ∼ 1.4 eV for GaAs) which provides a minimum of potential energy for both electrons and holes inside the InAs nanoparticle. The appearance of new nanoscale effects modifies the electro-optical properties of such a system which makes possible the improvement of existing device performance or even fascinating novel device applications. For the creation of coherent structures with very high purity and high density, as it is required for application in light emitting devices, self-assembling is a very important pathway. The quantum dot creation mostly relies on the relaxation of the strain accumulated during the growth of lattice mismatched materials, which happens in a non-equlibrium condition. This results in a statistical distribution of all the parameters characterizing the InAs nanocrystals as size, composition and strain, whose direct manifestation is the inhomogeneously broadened light emission deriving from quantum dot ensembles. At the dawning of the quantum dot development the broadening was considered as a limiting factor for application in semiconductor lasers. Today, it is considered favorably for all the applications where a broad gain spectrum is required as optical amplifiers, monolithic and external-cavity tunable lasers, and superluminescent diodes. The objective of this thesis is the application of InAs/GaAs self-assembled quantum dots to the active region of high power and broad-band superluminescent diodes emitting in the 1.3 μm wavelength region. Superluminescent diodes are edge-emitting semiconductor light sources based on the amplification of spontaneous emission along a waveguide where optical gain is achieved through current injection. They combine the high power and brightness of laser diodes with the low coherence of LEDs. The latter is a fundamental feature for the application in optical coherence tomography medical imaging, where the image resolution is related to the spectral bandwidth of the light source used. The achievement of bandwidths larger than 100 nm are demonstrated in this work through the optimization of molecular beam epitaxy growth conditions. This may be done optimizing the statistical size-dispersion of the dot ensemble, or through the use of different dot layers emitting at slightly different wavelengths. The large bandwidth emission is obtained also due to the peculiar energy structure of this material, for which a multi-state emission appears under particular injection conditions. As a term of comparison, best commercial single-chip superluminescent diodes for the imaging application at 1.3 μm show bandwidths around 60 nm. Moreover, the discrete nature of the energy levels in InAs quantum dots together with the implementation of a GaAs-based technology can be beneficial for the device temperature stability (the competing technology, based on InP, suffers from strong thermal degradation). The analysis and understanding of the device temperature characteristics will be detailed in the last chapter of the manuscript. Even though standard devices show an important temperature dependence, a better stability may be achieved through the use of p-doped active regions. In the last few years quantum dot devices have shown outstanding properties if compared to the competing quantum well technology. Low threshold currents, high temperature stability and low chirp in lasers, large bandwidths and low gain saturation in amplifiers have been demonstrated. However, in spite of the large interest among the scientific community, many of the microscopic processes at the origin of the electro-optical characteristics of this material are not completely understood yet. The physics of the quantum dot active material, will be modeled in this work through the use of systems of rate equations with different complexity depending on the system they are applied to. We will provide a mean-field rate equation model allowing to get insights about carrier dynamics in QD lasers. Also, we will develop two different traveling-wave rate equation models, one for the modeling of the L-I characteristics and the other for the modeling of the spectral characteristics of quantum dot superluminescent diodes. Considering the carrier and photon density distributions across the device cavity is essential in superluminescent diodes, where the high single pass gain results in large non-homogeneities of photon and carrier distributions. The work is motivated by an industrial cooperation with EXALOS AG, a leading company in the development, manufacturing, and sales of broadband superluminescent diodes.

EPFL2007

Improving the resolution in mask-aligner lithography

Raoul Kirner, Wilfried Noell, Toralf Scharf, Andreas Vetter

For the back-end microfabrication in integrated circuits and for the manufacturing of light emitting diodes, proximity mask-aligner lithography is still the tool of choice, due to its simplicity and low costs. However, the downscaling of functional elements requires also to enhance the resolution of mask-aligners. We report on sub-2 mu m structures using a continuous wave laser exposure source emitting at 193 nm. By using the self-imaging Talbot effect of periodic structures, we demonstrate periods below 700 nm, as required for optical metastructures. Furthermore, we present an optimization technique for optical proximity correction in mask-aligner lithography.

IEEE2018

Physics of optically driven nanojunctions

Philippe Andreas Rölli

Recent years have seen spectacular developments in the domain of nano-optics. Alongside the well-known techniques of super-resolution microscopy progress in nanofabrication has enabled important improvements in the fields of optical imaging and spectroscopy. Nowadays enhancements of specific near-field interactions by nano-antennae/cavities allows the optical readout of single molecule properties in a number of different systems. The observation of normal modes of vibration for example carries essential information on the orientation, link to the interface and environment in which the molecule is embedded. This thesis develops firstly a novel theoretical frame for these vibration-cavity interactions by following the optomechanical formalism, which has proven to be an accurate treatment of a wide variety of mechanical systems interacting with a laser field. By leveraging this framework, we investigate on the one hand several quantum limits. On the other hand, for the parameter space experimentally available and for well-designed cavities, novel regimes of interaction between the collective mode of vibration of an ensemble of molecules and an optical tone seem within reach. In parallel, this thesis experimentally explores one specific realization of such a system. In collaboration with the group of Christophe Galland we constructed the optical setups necessary to interrogate our nanostructures. The class of structures constructed, known as self-assembled nanojunctions or nanoparticles on mirror, reaches confinement of electric fields via plasmonic modes close to its fundamental limit and enables the study of many different mechanical systems whose thickness consist in a single molecule. Along this research we have developed techniques to characterize mechanical, electronic and thermal observables of nanojunctions interacting with an optical field. Our experimental study has enabled the discovery of a novel effect related to the electronic confinement of these quasi-0-dimensional structures. The characteristic photoluminescence of metallic nanostructures is found to consistently blink in nanojunctions akin to other quantum emitters. The mechanisms explaining in detail this blinking remain debatable but the numerous experimental data collected highlight the key role of the interface in the specificities of the blinking observed. This finding opens novel ways to characterize the important and to date ill-described question of the interfaces in nanojunctions. The observed modifications of the nanojunctions optical properties might constitute an interesting step towards the development of a novel class of functional materials ('gap-materials') with enhanced and tailored electro-optical properties. The last part of this thesis considers one technological application for this class of material by conceptually developing a new kind of detector based on the upconversion of an infrared photon to the visible; exploiting thus in a unique way the optical properties of the molecular system. The study of the quantum noises of these detectors highlights two exciting and technologically relevant directions for such devices : at room temperature these systems operate with levels of noise below state of the art devices, at lower temperatures these systems open an unexplored path towards single photon detection in a spectral range where this technology remains unavailable to date.