Electric-field control of single-molecule tautomerization
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Time-resolved photoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from similar to5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and ...
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We analyze the low-temperature photoluminescence decay times, for a series of MBE-grown samples embedding GaN-AlGaN quantum wells. We investigate a variety of configurations in terms of well widths, barrier widths and overall strain states. We find that no ...
The impact ionization of excitonic states is studied in epitaxial GaN films and GaN/AlGaN quantum well structures. The investigation is carried out by optical methods involving the observation of quenching of the exciton photoluminescence under an applied ...
A microchip structure for field amplification stacking (FAS) was developed, which allowed the formation of comparatively long, volumetrically defined sample plugs with a minimal electrophoretic bias. Up to 20-fold signal gains were achieved by injection an ...
We report on the electric field effects in photoluminescence (PL) and PL excitation (PLE) measurements of reverse-biased GaAs V-groove quantum wires. We observe large redshifts (9 meV at 265 kV/cm) of PL and PLE peaks as well as field dependent intensity a ...
