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Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Publications associées (44)

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AlGaN/GaN HEMT on (111) single crystalline diamond

Nicolas Grandjean, Denis Martin

AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and ...

2010

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Nicolas Grandjean, Marco Malinverni, Pierre Stadelmann, Denis Martin, Marcel Py, Marcus Gonschorek, Anas Mouti

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

2010

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Denis Martin

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

2009

Photosensitivity and luminescence of chromium and bismuth doped fibers

Christian Ban

Optical fiber materials with broad-band gain in the visible or in the telecommunication window are of great interest for optical communication or the biomedical domain in order to built integrated tunable lasers, amplifiers, ultra-short pulse lasers, or br ...

EPFL2009

Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching

Nicolas Grandjean, Yixing Chen

We present an optical investigation of GaN pillars using both micro-Raman (mu-Raman) and microphotoluminescence (mu-PL) spectroscopy. GaN pillars of diameter ranging from 100 nm to 5 mum were fabricated by electron beam lithography and reactive ion etching ...

2002

Reflected-light microscopy and fine-scale lasts microRaman spectroscopy of shocked garnet-cordierite-sillimanite gneisses in suevites of the Ries meteorite impact crater, Germany, led to the discovery of impact diamonds in their pristine graphite-diamond a ...

2001

The inertness and unique electrochem. properties of diamond present great potential for a variety of applications in aggressive environments. Preliminary results showed the widest known electrochem. window before water decompn., allowing new possibilities ...

1999

X-ray powder-diffraction measurements performed at the ESRF between 10(-4) and 22 GPa have been used to infer the equations of state (EOS) of both C-12 and C-13 diamonds. The experiments were carried out with a diamond-anvil cell and care was taken to obta ...

1999

CVD diamond probes for nanotechnology

Philippe Buffat

Diamond tips are attractive tools for nanoscience because of their hardness and, when doped chemical vapor deposited (CVD) diamond is used, their electrical conductivity. In this article, devices based on CVD diamond coated silicon tips and molded diamond ...

1998

Characterization of diamond-like carbon by Raman spectroscopy, XPS and optical constants

Crystalline diamond coatings and, increasingly, diamond-like amorphous carbon (DLC) films are used for tribological and protective layers for their hardness and chemical inertness. They are also under investigation for their electron emitting properties, w ...

1998