Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) = 0.17 +/- 0.08. At this temperature, single photon emission rates up to 10 6 s(-1) are reached, while g((2)) (0)