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Ultrasoft Liquid Metal Elastomer Foams with Positive and Negative Piezopermittivity for Tactile Sensing
Publications associées (64)
Extremely robust and conformable capacitive pressure sensors based on flexible polyurethane foams and stretchable metallization
Stéphanie Lacour, Douglas Cameron Watson, Hugues Vandeparre
Microfabricated capacitive sensors prepared with elastomeric foam dielectric films and stretchable metallic electrodes display robustness to extreme conditions including stretching and tissue-like folding and autoclaving. The open cellular structure of the ...
American Institute of Physics2013RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez
RF microelectromechanical systems (MEMS) capacitive switches for two different dielectrics, aluminum nitride (AlN) and silicon nitride (Si3N4), are presented. The switches have been characterized and compared in terms of DC and RF performance (5-40 GHz). S ...
Ieee-Inst Electrical Electronics Engineers Inc2012The Solution of Nonlinear Function of Ion Mobility Based on FAIMS Spectrum Peak Position
FAIMS's ion separation mechanism is based on analyte's characteristic nonlinear relationship between its ion mobility and applied electric field strength. Present characterization methods for this nonlinear relationship are based on precarious assumptions ...
Office Spectroscopy & Spectral Analysis2012Lead-free high-temperature dielectrics with wide operational range
The dielectric, electrical and structural properties of (1-x) (0.94Bi(1/2)Na(1/2)TiO(3)-0.06BaTiO(3))-xK(0.5)Na(0.5)NbO(3) (BNT-BT-xKNN) with x=0.09, 0.12, 0.15, and 0.18 were investigated as potential candidates for high-temperature capacitors with a work ...
American Institute of Physics2011Force feedback keyboard: self sensing
Within the framework of a project consisting in developing a haptic keyboard, each key is aimed to be controlled individually in position and force. Small sized actuators has already been designed and integrated in a 64 keys force feedback keyboard. The pr ...
2011Single Phase Resonant LC Circuit Using a Bank of Self-Switched Capacitors
Alfred Rufer, Daniel Siemaszko, Christian Rod
This paper presents a preliminary work on the feeding of an AC dipole using a resonant circuit with a varying resonant frequency. A single phase LC oscillator containing a variable capacitor is fed by a wide band amplifier or a voltage source inverter. For ...
Institute of Electrical and Electronics Engineers2011Annealing effects on electrical properties and defects of CaCu_{3}Ti_{4}O_{12} thin films deposited by pulsed laser deposition
A systematic study was carried out to assess property changes in CaCu3Ti4O12 thin films upon annealing in air in order to evaluate the impact of oxygen vacancies on their colossal dielectric constant behavior. Highly preferentially oriented thin-film sampl ...
2010Gas Sensors on Plastic Foil with Reduced Power Consumption for Wireless Applications
Recently, there is a growing interest in developing so-called "smart" RFID tags for logistic applications. These smart tags incorporate sensing devices to monitor environmental parameters such as humidity and temperature throughout the supply chain. To ful ...
EPFL2010Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films
Nava Setter, Alexander Tagantsev, Dragan Damjanovic, Igor Stolichnov, Pavel Mokry
An evidence that the dielectric aging in the polydomain Pb(Zr0.45Ti0.55)O-3 thin films is controlled by progressive pinning of 180 degrees domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study of the ...
2009Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures
Nicolas Grandjean, Jean-François Carlin
The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...
2009