Multi-User Precoder Designs for RGB Visible Light Communication Systems
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The present thesis deals with luminescent compounds based on lanthanide complexes that are suitable for color reproduction and optical document security with invisible luminescent inks. This thesis is divided in two distinct fields: chemistry, which produc ...
An experimental method is demonstrated for the determination of internal quantum efficiency (IQE) in III-nitride-based light-emitting diodes (LEDs). LED devices surrounded with an optically absorbing material have been fabricated to limit collected light t ...
This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs). ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
It was about 125 years ago that the light bulb was commercialized by Thomas Edison. No doubt a brilliant invention at the time, today its low power conversion efficiency is one of the reasons why lighting in the western world has such high energy consumpti ...
A method and computing system are proposed for producing an authenticable security device with two sides. The verso side is covered with a luminescent emissive variable intensity layer formed for example by invisible luminescent ink halftones and the recto ...
Light-emitting diodes are becoming the alternative for future general lighting applications, with huge energy savings compared to conventional light sources owing to their high efficiency and reliability. Polarized light sources would largely enhance the e ...
A fundamental step towards achieving an "on demand" single photon source would be the possibility of electrical pumping for a single QD and thus the integration of such a device in an opto-electronic circuit. In this work we describe the fabrication proces ...
Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 mu m were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both c ...
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...