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Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Publications associées (38)

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Diamond on GaN integration for power semiconductor devices with efficient thermal management

Reza Soleiman Zadeh Ardebili

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

EPFL2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Tzu-Hsien Shen

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

NATURE RESEARCH2021

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Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

IEEE2021

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InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Halil Kerim Yildirim, Mohammad Samizadeh Nikooytabalvandani, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Furkan Karakaya

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020

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Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion. Bipolar transistors are generally preferred over MOS transistors because of their lower spread ...

2018