Pseudo-halide anion engineering for alpha-FAPbI3 perovskite solar cells
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Commercial large-area solar simulators are principally in the form of Xenon flashers, which intrinsically have a short flash duration time, typically 100 ms at low spectrum quality and 10 ms at high spectrum quality. This implies measurement time constrain ...
This thesis investigates amorphous (a-Si:H) and microcrystalline (μc-Si:H) solar cells deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) in the n-i-p or substrate configuration. It focuses on processes that allow the us ...
Production volume of PV modules increases at > 35% per year, but one is yet far from making a global impact on energy supply. One of the obstacles is given by the present high production costs of PV modules. A possibility to reduce costs are thin-film PV m ...
The advantages and limitations of photovoltaic solar modules for energy generation are reviewed with their operation principles and physical efficiency limits. Although the main materials currently used or investigated and the associated fabrication techno ...
Several aspects of the science and technology of thin film silicon for photovoltaic applications will be presented. The potential advantages of this technology over crystalline wafer technology will be discussed. A basic understanding of the material prope ...
PLZT x/65/35 (x = 4, 8, 10) thin films were prepared by the acetic-acid based chemical solution deposition processing from lead tetraacetate, lanthanum nitrate and zirconium and titanium propoxides. Introducing top layer of PLZT with large PbO excess can p ...
Aliovalent Nb doping (less than or equal to 10 at.%) of sol-gel-derived lead zirconate titanate (PZT) thin films was investigated with the intention of improving the ferroelectric properties. Nb addition was found to significantly alter the perovskite crys ...
We present measurements of critical currents and critical magnetic fields in cylindrical indium films. The most interesting result is that the ratio of the experimental critical current I(c1) to Silsbee's critical value I(c0) practically does not depend on ...