Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
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Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
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A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...
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We present a theoretical and experimental study of a multilayer organic light emitting device (OLED) with a partially doped emission layer. An extended version of our established "MOLED" device model is used to understand the effects of the partially doped ...
The remarkable effect on lifetime improvement of copper phthalocianine (CuPc) coated indium tin oxide (ITO) anode of organic light emitting diodes (OLED's) is experimentally well approved. Also known are the electrode morphology, with and without CuPc coat ...
Localization phenomena related to the fluctuating band potential profile of the InGaN alloy were investigated via hydrostatic pressure dependent measurements of luminescence of an InGaN quantum structure. We examine the suitability of the hydrostatic press ...
Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. M ...