Thermal scanning probe lithography for 2D material-based gas sensing
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Carbon nanotubes are novel materials with unique electrical and mechanical properties. Here we present results on their atomic structure and mechanical properties in the adsorbed state, on ways to manipulate individual nanotubes, on their electrical proper ...
Lithography on (100) single-crystal silicon and amorphous silicon is performed by electric-field-enhanced local oxidation of silicon using an atomic force microscope (AFM). Amorphous silicon is used as a negative resist to pattern silicon oxide, silicon ni ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...
Electrodeposition on Highly Oriented Pyrolytic Graphite (HOPG) steps has been proven to be an easy method for the preparation of metal (Pd, Cu, Ag etc) and metal oxide or sulfide (MoO2, MnO2, MoS2) nanowires in recent years. These wires can be transferred ...
We present a first-principles investigation of the structural properties of two models for the Si(001)-SiO2 interface. The models derive from attaching tridymite, a crystalline form of SiO2, to Si(001), and then allowing for full relaxation. These models d ...
We present an overview of recent selective photoluminescence (PL) experiments on shallow levels in ZnSe and GaN. Through two electron transitions (TET) and electronic Raman scattering (ERS) investigations on solid phase recrystallized bulk ZnSe doped with ...
We report on the first observation of both confined optical phonons and interface phonons in a single strained InAs quantum well grown on InP. Quasi resonant Raman measurements allow for the observation of interface modes. Informations about the mismatch i ...
We have investigated the influence of strain on the morphology in metal heteroepitaxy at temperatures where growth is dominated by kinetics. Whereas Ag(111) homoepitaxy is three dimensional below 400 K, the growth of Ag On Pt(111) proceeds two dimensionall ...
This paper presents a comparative study of surface micromachined structures fabricated in three different materials, using torsional micromirrors as test vehicle. The devices are realized in single-crystal silicon, polycrystalline silicon and aluminum. Mec ...
We report on the first observation of both confined optical phonons and interface phonons in a single strained InAs quantum well grown on InP. Quasi resonant Raman measurements allow for the observation of interface modes. Informations about the mismatch i ...
