Catalyzing Bond-Dissociation in Graphene via Alkali-Iodide Molecules
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Type-II GaAs/AlAs multiple-quantum well samples groan by low-pressure metal-organic vapour-phase epitaxy have been investigated. The layered structures consist of 50 periods of either 2 monolayers (ML), 4 ML. 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs ...
We report low-temperature magnetoresistance (MR) measurements on rings of single-wall carbon nanotubes. Negative MR characteristic of weak one-dimensional localization is clearly observed from 3.0 to 60 K, and the coherence length Lφ is obtained as a funct ...
We discuss the scheme rind test performances of this recently commissioned system in its final configuration. The tests show that the improvements in the electron optics system with respect to other instruments in the same class made it possible to reach l ...
Variable-temperature scanning tunneling microscopy has been applied to study kinetic processes involved in epitaxial growth. This paper concentrates on nucleation and aggregation of submonolayer Ag films on a Pt(lll) surface. From island density versus tem ...
We use the cathodoluminescence mode of a scanning electron microscope to investigate the depth and lateral dependencies of the electron-hole pairs generation by the electron beam in Al0.4Ga0.6As semiconducting material. A multiquantum well structure acts a ...
To study the effect of damage induced during the Zn diffusion on the properties of the material, p-n junctions, obtained by zinc diffusion, are investigated by electron beam induced current (EBIC) at different temperatures. At helium temperature, the EBIC ...
We report on a novel approach to measure the phase relaxation length and femtosecond lifetime of hot quasiparticles on metal surfaces. A 4 K scanning tunneling microscope has been used to study the spatial decay of interference patterns in the local densit ...
Al-Sn layer structures were prepared by simultaneous evaporation of Al and Sn onto predeposited Al layers prepared on SiO2-covered Si wafer substrates, at a substrate temperature of 470 K and an oxygen partial pressure of 3 X 10(-3) Pa. The chemical state, ...
We explore the defect distribution and the degradation in electron beam pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence measurements in a scanning electron microscope with transmission electron microscopy. We found that degradation ...
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A mul ...