Vapor deposition of metal halide perovskite thin films: Process control strategies to shape layer properties
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The anodic oxidn. of H2SO4 to H2S2O8 was investigated on B-doped synthetic diamond electrodes obtained by hot filament chem. vapor deposition. High current efficiency for H2S2O8 formation can be achieved in concd. H2SO4 (7.5 mol dm-3) and using high curren ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The photolytic laser chem. vapor deposition (LCVD) rate of Pt from its hexafluoroacetylacetonate complex precursor was measured in situ and in real time. Optical transmission of the 350 nm photolysis light through the deposited Pt film and a transparent gl ...
The low pressure chem. vapor deposition (LPCVD) of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates partially covered with a Pt seeding layer. With a known concn. of water vapor in the gas mixt., almost equal Cu film growth r ...
Intrinsic stress measurements were carried out on hydrogenated amorphous silicon (a-Si:H) films deposited with different excitation frequencies (13.56-70 MHz), by plasma-enhanced chemical vapor deposition. It was observed that films deposited at 70 MHz hav ...
We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. ...
The low-pressure chem. vapor deposition of copper and platinum was studied on SiO2 substrates which had been locally prenucleated with ultrathin metal layers of Pt, Cu, Pd, Au, and W. These layers were between 0.1 and 30 .ANG. thick and were produced by va ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder, a new type of material, named polymorphous silicon (pm-Si:H) is obtained. pmSi:H exhibits enhanced transport pro ...
The influence of Ta, Ti and TiO2 adhesion layers with Pt bottom electrodes and the deposition temperature of the metallization on the nucleation and growth of sol-gel derived Pb(Zr0.53Ti0.47)O-3 thin films is reported. Several different PZT annealing profi ...
Laser direct writing of metal lines from solid metalorg. films coated on surfaces has been studied in three systems. Copper deposition from Cu(HCOO)2.2H2O was carried out at higher writing speeds than previously attained. Direct writing of iridium lines fr ...
