Semiconductor-based device architectures in multimaterial fibers
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Four-point probes (4PPs) are used for the resistivity measurement of thin metal or semiconductor films. There is an interest in miniaturization of 4PPs to obtain higher surface sensitivity, increased spatial resolution and less damage to the sample. Severa ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...
Over the past decade a new family of optoelectronic devices has emerged whose performance is enhanced by placing the active device structure inside a Fabry–Perot resonantmicrocavity [P. E. Green, IEEE Spectrum 13 (2002)]. The increased optical field allows ...
A semiconductor device such as a DRAM memory device is disclosed. A substrate 12 of semiconductor material is provided with energy band modifying means in the form of a box region 38 and is covered by an insulating layer 14. A semiconductor layer 16 has so ...
The aim of this paper is to present a novel approach to pattern silicon nanowires for advanced electronics applications. A simple non-lithographic process was successfully developed to define sub-40nm diameter silicon wires and to connect them to test pads ...
Nucleation and growth models are well developed for nucleation on homogeneous substrates, and they can typically be described-in terms of three energy parameters. Nucleation on substrates containing point-defect traps has been investigated, at the cost of ...
Photoelectric conversion device (1) comprising semiconductor electrode (15) having semiconductor layer (7) carrying a sensitizing dye, counter electrode (9) arranged opposite to the semiconductor electrode (15) and electrolyte layer (13) arranged between t ...
Electrodeposition on Highly Oriented Pyrolytic Graphite (HOPG) steps has been proven to be an easy method for the preparation of metal (Pd, Cu, Ag etc) and metal oxide or sulfide (MoO2, MnO2, MoS2) nanowires in recent years. These wires can be transferred ...
In this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as similar to270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by b ...
Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ...
