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Semiconductor-based device architectures in multimaterial fibers

Publications associées (203)

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Diamond on GaN integration for power semiconductor devices with efficient thermal management

Reza Soleiman Zadeh Ardebili

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

EPFL2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Lucas Güniat, Valerio Piazza, Wonjong Kim

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Heera Menon

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

2021

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

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Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...

AMER CHEMICAL SOC2020

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

EPFL2020

Permanent photodoping of plasmonic gallium-ZnO nanocrystals

Reinis Ignatans

Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga dope ...

ROYAL SOC CHEMISTRY2020