Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same
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The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...
High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed f ...
The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielec ...
The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...
Using a pump-probe differential transmission experiment in heterodyne detection, we measured the refractive index dynamics at the ground-state excitonic transition in electrically pumped InAs/GaAs quantum-dot amplifiers emitting near 1.3 mu m at room tempe ...
The paper reports on the effects of Gamma radiation to single-photon avalanche diodes (SPADs). To the best of our knowledge, this is the first study ever conducted on SPADs fabricated in CMOS technology. A typical CMOS SPAD consists of a pn junction revers ...
In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model o ...
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...