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This report presents the characterization of singly-clamped and doubly-clamped resonator devices. Resistance tests were performed to ensure adequate top-to-bottom insulation, allowing the characterization work to proceed. The piezoelectric characteristics of the devices were evaluated through their transverse piezoelectric coefficient, d31. In order to estimate this coefficient in singly-clamped devices, the resonators were driven at resonance with increasing drive voltages and their behavior was compared to the theory. In doubly-clamped devices, the method consisted in applying a DC bias through the piezoelectric layer, which modulated the stress within the resonator and thus altered the resonance frequency. The d31 could then be extracted after thorough matching with simulations
Herbert Shea, Sylvain Thomas Schaller