Giant two-photon absorption of anatase TiO2 in Au/TiO2 core-shell nanoparticles
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The photoluminescence (PL) and PL-excitation (PLE) spectra of InyCa1-yAs/AlxGa1-xAs compressively strained V-groove quantum wires (QWR's) are compared to that of lattice-matched GaAs/AlyGa1-xAs QWR's with the same wire geometry. The PL is preferentially po ...
The optical properties of high-quality V-groove GaAs/AlxGa1-xAs quantum wires have been investigated using low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques. We systematically study the evolution of PL and PLE spectra ...
An optoelectric radiation detector detecting short wave electromagnetic radiation, characterized by a charge transfer layer containing a hole conduction material. ...
Quantum many-body states of up to four excitons are studied in small parallelepipedal quantum dots with only two nondegenerate electronic levels in the conduction and in the valence bands. Only one type of hole is considered. We find the set of good quantu ...
We have studied the effect of valence band mixing on the optical properties of semiconductor quantum wires by analyzing the luminescence polarization. Large polarization anisotropy is observed and directly compared to the effects predicted by a k . p model ...
We report on luminescence, transmission and luminescence excitation measurements on indirect-gap AlxGa1-xAs in the composition range 0.42 less than or equal to x less than or equal to 0.86. The phonon coupling strength in transitions of bound excitons is i ...
Studies have been carried out on aqueous colloidal suspensions of semiconductors, principally by using laser flash-photolysis techniques, in order to scrutinize in detail the dynamics of light-induced charge transfer reactions occuring at the solid-electro ...
A Hall mobility as high as 176,200 cm2V-1s-1 at 77 K with N(d)-N(a) = 1.3 x 10(14) cm-3 has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for la ...
The laser-induced luminescence of direct gap semiconductors can be measured with high spatial (1 μm) and temporal (<1 ns) resolution. A profiling technique is described for in-situ measurements during laser processing. It allows the evaluation of tem ...
