Germination et croissance de films minces de Pb(Zr, Ti)O3 sur silicium passivé et substrats métalliques
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The longitudinal d(33) piezoelectric coefficient was studied in rhombohedral Pb(Zr0.6Ti0.4)O-3 thin films with (111), (100), and "random" orientation. The largest d(33) was found in (100)-oriented films and the smallest along the polarization direction in ...
This paper reviews deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for applications in micro-electromechanical systems. An ultrasonic micromotor is described as an example. A summary of the published data on piezoelectric proper ...
In situ reactively sputter deposited, 300-nm-thick Pb(Zrx,Ti1-x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2). X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements ...
The integration of piezoelectric Pb(Zr,Ti)O-3 thin films on silicon substrates for ultrasonic motor applications is reviewed. With suitable buffer and bottom electrode layers the problems due to high processing temperatures in oxygen ambient can be handled ...
Several bottom electrode systems for ferroelectric thin film deposition onto reactive substrates or reactive metal films have been investigated with respect to chemical barrier properties and contact resistivity. Such electrode systems should not deteriora ...
Electrode stability, interdiffusion, phase purity and deviation from stoichiometry at the PZT-electrode interface are key issues in PZT thin film integration. This article highlights the use of transmission electron imaging combined with energy dispersive ...
The ac field dependence of dielectric and piezoelectric response of sol-gel derived Pb(Zr,Ti)O(3)thin films is presented. The nonlinear response of dielectric polarisation and piezoelectrically induced strain at sub-switching fields was studied in terms of ...
The effects of donor (Nb, Ta) and acceptor (Na, Mg, Fe) dopants on the crystallization mechanism of PZT thin films were investigated. The parameters which control microstructure development were found to be different for donors and accepters. Lead stoichio ...
The effective piezoelectric transverse coefficient e(31,f) was measured on various lead zirconate-titanate (PZT) and aluminum nitride thin films. The measurement set-up is based on the collection of the electric charges created by the forced deflection of ...
The effect of acceptor (Na, Mg, Fe) and donor (Nb,Ta) dopants on the switching properties of Pb(Zr0.53Ti0.47)O-3 (PZT) thin films with Pt electrodes was investigated for broad dopant concentration ranges. The effect of dopants on endurance was found to be ...
