Formation mechanisms of low-dimensional semiconductor nanostructures grown by OMCVD on nonplanar substrates
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In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88 ...
When InP is grown by chemical beam epitaxy on substrates patterned with ridges oriented along [110] with (111)B sidewall planes, the migration of In species on the surface changes direction with growth temperature. The movement is from the ridge to the val ...
The photoluminescence energy of strained (Ga, In)As quantum wells grown on (001) GaAs slightly misoriented (2 degrees-6 degrees) towards (111)A exhibits a blue shift when compared to quantum wells grown on perfectly oriented substrates. It is shown that th ...
When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split in ...
A magneto-optical study of accepters in varying degrees of confinement in GaAs/Al-x Ga-l-x, As quantum wells (QW's) is presented. A model for the splitting of the acceptor bound exciton (BE) and the allowed BE transitions in the presence of a magnetic fiel ...
We studied the formation of buried heterostructures obtained in a single growth step over nonplanar substrates patterned with ridges. When the ridge dimensions are large enough, the growth on the mesa top is similar to that on a planar substrate. In contra ...
This work shows that the critical thickness for the two-dimensional-three-dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corrobo ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
Microsegregation in a binary alloy solidified in the form of deep cells is predicted using a simplified finite difference model. The model accounts for solid state diffusion and for flow of liquid between cells driven by solidification shrinkage. Cell tip ...
Strained In0.35Ga0.65As/GaAs quantum wells of various thicknesses (6-16 monolayers) obtained by molecular beam epitaxy at 400 degrees C were studied by optical pumping techniques at 4 K. Improved quantum well optical properties, due to significant increase ...