Extrinsic contributions to the piezoelectric response of lead-based ferroelectrics
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The macroscopic properties of ferroelectric materials depend directly on the domain configuration and the structure of the domain boundaries. For this reason, their study is of great scientific and technological interest. Several models have been developed ...
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Using a serial bilayer model we show that heterogeneous ferroelectric systems may exhibit substantial Maxwell-Wagner piezoelectric relaxation. The relaxation has its origin in the coupling of the dielectric and piezoelectric properties. The model predicts ...
Microstructure, structural defects, and piezoelectric response of bismuth titanate (Bi4Ti3O12)(1-x) and bismuth titanium niobate (Bi3TiNbO9)(x) solid solution with x=0.05 and 0.2 were investigated. Depending on x and on the sintering temperature different ...
The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...
The effective piezoelectric transverse coefficient e(31,f) was measured on various lead zirconate-titanate (PZT) and aluminum nitride thin films. The measurement set-up is based on the collection of the electric charges created by the forced deflection of ...
The longitudinal d(33) piezoelectric coefficient was studied in rhombohedral Pb(Zr0.6Ti0.4)O-3 thin films with (111), (100), and "random" orientation. The largest d(33) was found in (100)-oriented films and the smallest along the polarization direction in ...
Very strong coefficients for spontaneous and piezoelectric polarizations have recently been predicted for III-V nitride semiconductors with natural wurtzite symmetry. Such polarizations influence significantly the mechanisms of radiative emissions in quant ...