High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Publications associées (29)

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Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi, Christopher Michael Long

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

Ieee-Inst Electrical Electronics Engineers Inc2015

750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu

We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wave ...

Optical Society of America2015

Electrically Pumped Vertical-External-Cavity Surface-Emitting Lasers With Patterned Tunnel Junction for Single Transversal-Mode Emission

Elyahou Kapon, Alexei Sirbu

This paper reports on a numerical analysis of methods for current injection into AlInGaAs/InP tunnel-junction electrically pumped vertical-external-cavity surface-emitting lasers. The tunnel junction is patterned to minimize the current crowding effect and ...

Ieee-Inst Electrical Electronics Engineers Inc2015

GaN-based photonic crystal cavities on silicon for visible and near infrared applications

Noelia Vico Triviño

Photonic crystal (PhC) cavities combine ultra-high quality (Q) factors with small mode volumes, resulting in an enhancement of the light-matter interaction at the nanoscale, which, beyond fundamental studies is advantageous for countless applications in ph ...

EPFL2015

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Nicolas Grandjean, Gatien Cosendey, Ehsan Hashemi

Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, and is sometimes neglected to simplify the numerical simulations. However, in contrast to outcoupling and absorption losses, we show that the lateral loss c ...

Optical Soc Amer2014

Control of cavity lifetime of 1.5 mu m wafer-fused VCSELs by digital mirror trimming

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5 mu m. The fine control of the photon cavity lifetime thus achieved is employed to extract important device parameters and optimize ...

Optical Soc Amer2014

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Lukas Mutter, Christopher Michael Long

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Optical Society of America2014

High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band

Elyahou Kapon, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu

We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 mu m wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtaine ...

Optical Soc Amer2014

Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning

Elyahou Kapon, Benjamin Dwir, Nicolas Volet, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Pascal Gallo, Zlatko Mickovic, Lukas Mutter

Transverse mode discrimination is demonstrated in long-wavelength wafer-fused vertical-cavity surface-emitting lasers using ring-shaped air gap patterns at the fused interface between the cavity and the top distributed Bragg reflector. A significant number ...

Optical Society of America2013

156 µm 1 watt single frequency semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu

A single frequency wafer-fused semiconductor disk laser at 1.56 mu m with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser o ...

Optical Society of America2013

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750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu

Optical Society of America2015

Electrically Pumped Vertical-External-Cavity Surface-Emitting Lasers With Patterned Tunnel Junction for Single Transversal-Mode Emission

Elyahou Kapon, Alexei Sirbu

Ieee-Inst Electrical Electronics Engineers Inc2015

Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning

Elyahou Kapon, Benjamin Dwir, Nicolas Volet, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Pascal Gallo, Zlatko Mickovic, Lukas Mutter

Optical Society of America2013