Nanostructured graphitic materials, including graphene hosting Å to nanometer-sized pores, have attracted attention for various applications such as separations, sensors, and energy storage. Graphene with Å-scale pores is a promising next-generation materi ...
Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...
Particle accelerators foresee the use of Nb3Sn in the next generation of dipole magnets. A common design strategy is to grade the coil, i.e., to optimize the quantity of superconductor in the turns with respect to the magnetic field intensity. As a consequ ...
IEEE Institute of Electrical and Electronics Engineers2022
This thesis investigates novel single-molecule luminescence phenomena at their inherent, sub-molecular length scale. The microscopic understanding of luminescence processes will be crucial for the continued improvement of organic optoelectronic and semicon ...
Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free-space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free space, such as high nonlineari ...
The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...
The growing needs for human healthcare have driven the development of wearable devices for monitoring the health status of an individual. Polymers represent a promising platform for such devices due to their ability to form an intimate contact between soft ...
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...
Topological semimetals are frequently discussed as materials platforms for future electronics that exploit the remarkable properties of their quasiparticles. These ideas are mostly based on dispersion relations that mimic relativistic particles, such as We ...
