Crossing the ballistic-ohmic transition via high energy electron irradiation

Publications associées (31)

À propos
Confidentialité
Mentions légales

Graph Chatbot

Dynamics of nanoscale systems probed by time-resolved STM-induced luminescence

Anna Maria Roslawska

The efficiency and peculiarities of processes such as surface adsorption or electron-to-photon energy conversion in organic and inorganic structures are determined by the dynamics at the scale of individual molecules, atoms and charges. The timescales of s ...

EPFL2019

Spin-valley optoelectronics based on two-dimensional materials

Dmitrii Unuchek

Two-dimensional (2D) materials, in particular graphene and transition metal dichalcogenides (TMDC), have attracted great scientific interest over the last decade, revealing exceptional mechanical, electrical and optical properties. Owing to their layered n ...

EPFL2019

Out-of-plane transport in ZrSiS and ZrSiSe microstructures

Philip Johannes Walter Moll, Maja Deborah Bachmann, Kent Robert Shirer

A recent class of topological nodal-line semimetals with the general formula MSiX (M = Zr, Hf and X = S, Se, Te) has attracted much experimental and theoretical interest due to their properties, particularly their large magnetoresistances and high carrier ...

2019

Multiarm and Substituent Effects on Charge Transport of Organic Hole Transport Materials

Mohammad Khaja Nazeeruddin, Kevin Sivula, Liang Yao, Antonio Prlj, Kun-Han Lin, Nikita Drigo, Han-Hee Cho

We explore several potential dopant-free triphenylamine-based hole transport materials for perovskite solar cells by combining two design strategies: (1) incorporation of multiple arms for mobility enhancement and (2) including Lewis bases that assist in d ...

2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Klaus Kern, Marko Burghard

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This ...

2019

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

EPFL2018

A single chip electron spin resonance detector based on a single high electron mobility transistor

Giovanni Boero, Nergiz Sahin Solmaz, Alessandro Valentino Matheoud

Single-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magne ...

Academic Press Inc - Elsevier Science2018

Magnetic Stability of Single Lanthanide Atoms on Graphene

Romana Baltic

This thesis presents a study of the magnetism of surface supported atoms performed principally with XMCD spectroscopy and multiplet calculations. The objective of the research was twofold: first, to study the underlying interactions and conditions governi ...

EPFL2018

Nano-electromechanical systems based on ultra-thin semiconductors

Sajedeh Manzeli

Nowadays, the interest in 2D materials has gone far beyond graphene. Specially, monolayers of transition metal dichalcogenides (TMDs) offer a broad spectrum of electronic and optical properties, and show the potential to revolutionize the electronics indus ...

EPFL2018

Page 3 sur 4