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Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

Publications associées (28)

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Stress effects on the impedance and ferroelectricity of PVDF-BiFeO3-MWCNT films using xanthan gum as dispersant

Frank Nüesch, Francis Owusu

Composite films based on dispersions of bismuth ferrite (BiFeO3) in polyvinylidene fluoride (PVDF) matrixes were prepared in the presence of multiwalled-carbon-nanotubes (MWCNT), using xanthan gum (XG) as dispersant. Films were prepared by spin coating and ...

ELSEVIER SCIENCE SA2022

Induced giant piezoelectricity in centrosymmetric oxides

Paul Muralt, Dragan Damjanovic, Mahmoud Hadad, Vasiliki Tileli, Lukas Riemer, Daesung Park

Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric materials must have a noncentrosymmetric crystal structure. For more than a century, this has remained a major obstacle ...

American Association for the Advancement of Science2022

Stretchable High Response Piezoelectric Elastomers Based on Polable Polynorbornene Fillers in a Polydimethylsiloxane Matrix

Frank Nüesch, Francis Owusu

To advance the field of piezoelectrics, it is desirable to find materials that combine high piezoelectricity with high elasticity. Applications such as self-sensors, stretchable electronics, soft robots, and energy harvesting would benefit tremendously. Ho ...

WILEY-V C H VERLAG GMBH2022

Recent Advances in Piezoelectric Materials for Electromechanical Transducer Applications

Dragan Damjanovic

Ferroelectricity has made a huge impact on science and technology since Joseph Valasek (then a Ph.D. student at the University of Minnesota) discovered it in 1920, a little longer than 100 years ago. Whereas Dr. Valasek's original research was motivated by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Microscopic picture of paraelectric perovskites from structural prototypes

Nicola Marzari, Giovanni Pizzi, Michele Kotiuga, Boris Kozinsky

We highlight with first-principles molecular dynamics the persistence of intrinsic < 111 > Ti off-centerings for BaTiO3 in its cubic paraelectric phase. Intriguingly, these are inconsistent with the Pm (3) over barm space group often used to atomistically ...

AMER PHYSICAL SOC2022

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

Jan Hugo Dil

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, alpha-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to g ...

Nature Portfolio2022

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Eamon Patrick O'Connor, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Teodor Rosca, Matteo Cavalieri, Carlotta Gastaldi, Luca Capua, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Interface-Dominated Time-Dependent Behavior of Poled Poly(Vinylidene Fluoride–Trifluoroethylene)/Barium Titanate Composites

Véronique Michaud, Yves Leterrier, Dragan Damjanovic, Sara Dalle Vacche

Composites in which particles of ferroelectric ceramic phase are randomly dispersed in a polymeric matrix are of interest because of flexibility, conformability, and ease of processing. However, their piezoelectric properties are rather low, unless very hi ...

2020

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Induced giant piezoelectricity in centrosymmetric oxides

Paul Muralt, Dragan Damjanovic, Mahmoud Hadad, Vasiliki Tileli, Lukas Riemer, Daesung Park

American Association for the Advancement of Science2022

Stretchable High Response Piezoelectric Elastomers Based on Polable Polynorbornene Fillers in a Polydimethylsiloxane Matrix

Frank Nüesch, Francis Owusu

WILEY-V C H VERLAG GMBH2022

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

Jan Hugo Dil

Nature Portfolio2022

Interface-Dominated Time-Dependent Behavior of Poled Poly(Vinylidene Fluoride–Trifluoroethylene)/Barium Titanate Composites

Véronique Michaud, Yves Leterrier, Dragan Damjanovic, Sara Dalle Vacche

2020

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

AMER INST PHYSICS2021