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CMOS imager based on single photon avalanche diodes

Publications associées (50)

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A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015

Design and Implementation of CMOS Image Sensors for Biomedical Applications

Gözen Köklü

Since the first introduction of digital cameras, the camera market has been taking tremendous interest from many fields. This trend has even accelerated when the cost, size, and power consumption of such devices were reduced with the introduction of camera ...

EPFL2014

A 240x180 130dB 3µs Latency Global Shutter Spatiotemporal Vision Sensor

Event-based dynamic vision sensors (DVSs) asynchronously report log intensity changes. Their high dynamic range, sub-ms latency and sparse output make them useful in applications such as robotics and real-time tracking. However they discard absolute intens ...

2014

Measurement and modeling of microlenses fabricated on single-photon avalanche diode arrays for fill factor recovery

Edoardo Charbon, Juan Mata Pavia, Martin Wolf

Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel's surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanch ...

Optical Soc Amer2014

MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Maher Kayal, Adil Koukab, Denis Sallin

This letter presents a CMOS-compatible photodetector displaying direct light-to-time conversion and intrinsic charge integration with a very low dark current. This device is particularly adapted for applications requiring high sensitivity such as biolumine ...

Institute of Electrical and Electronics Engineers2014

Oversampled Noisy Binary Image Sensor

Martin Vetterli, Feng Yang

We study the oversampled binary image sensor in [1] under noisy scenario. The binary image sensor is similar to traditional photographic film with pixel value equal to "0" or "1". The potential application of the oversampled binary image sensor is high dyn ...

Ieee2013

A 240x180 120dB 10mW 12us-latency sparse output vision sensor for mobile applications

This paper proposes a CMOS vision sensor that combines event-driven asychronous readout of temporal contrast with synchronous frams-based active pixel sensor (APS) readout of intensity. The image frames can be used for scene content analysis and the tempor ...

2013

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

Maher Kayal, Nicolas Blanc, Lysandre-Edouard Bonjour

An image sensor with 256 x 256 pixels and a pitch of 6.3 mu m, suitable for resolving ultrashort optical phenomena, is developed. It is based on a standard CMOS process with pinned photodiode option. The pixel comprises three transfer gates to allow versat ...

Institute of Electrical and Electronics Engineers2013

Design constraints on Cherenkov telescopes with Davies-Cotton reflectors

Mathieu Ribordy, Thomas Günther Bretz

This paper discusses the construction of high-performance ground-based gamma-ray Cherenkov telescopes with a Davies-Cotton reflector. For the design of such telescopes, usually physics constrains the field-of-view, while the photo-sensor size is defined by ...

Elsevier2013

Bits from Photons

Feng Yang

The trends in the design of image sensors are to build sensors with low noise, high sensitivity, high dynamic range, and small pixel size. How can we benefit from pixels with small size and high sensitivity? In this dissertation, we study a new image senso ...

EPFL2012