Interferometric study of piezoelectric degradation in ferroelectric thin films
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Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
The present study aims at a better understanding of the high piezoelectric properties encountered in lead-based ferroelectrics by focusing on the extrinsic contributions to the response. The main characteristics of these materials are the highly nonlinear ...
Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors wit ...
We investigated he effect of film orientation on piezoelectric and ferroelectric properties of (Bi(3.25)Ln(0.75))Ti3O12 (Ln=La, Nd, and Sm). c-axis-oriented films were grown on (111)Pt electrodes with nondoped Bi4Ti3O12 buffer layers. The films grown on (1 ...
PbTiO3 thin films were prepared from alkoxide solution precursors and crystallized onto Pt/TiO2/SiO2/Si substrates. Microscopy observations revealed that the complexity of the domain walls structure decreased with the grain size. Dielectric, electrostricti ...
A hydrothermal processing route was used to produce anisotropic submicrometer particles of potassium niobate-tantalates and pure potassium niobate. Piezoelectric activity, switching polarization, and piezoelectric hysteresis loops were observed in these fe ...
The dynamic piezoelectric response of SrBi4Ti4O15 ceramics with Aurivillius structure was investigated at high alternating stress, low frequencies (0.01 to 100 Hz), and temperatures from 20 to 200 degreesC. The piezoelectric nonlinearity, observed only at ...
The dynamic piezoelectric response of SrBi4Ti4O15 ceramics with Aurivillius structure was investigated at high alternating stress, low frequencies (0.01 to 100 Hz), and temperatures from 20 to 200 degreesC. The piezoelectric nonlinearity, observed only at ...
The printing of lead zirconate titanate (PZT, Pb(Zr,Ti)O-3) piezoelectric thick films on silicon substrates is being studied for potential use as microactuators, microsensors, and micro.. transducers. A fundamental challenge in the fabrication of useful PZ ...
