Evidence for domain-type dynamics in the ergodic phase of the PbMg1/3Nb2/3O3 relaxor ferroelectric
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Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 Angstrom down to the atomic sc ...
The non-linear dielectric properties of single crystals of PbMg1/3Nb2/3O3 relaxer ferroelectric were investigated experimentally by using measurements of the dielectric permittivity of this material as a function of the DC bias and the AC driving fields. T ...
We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This b ...
Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
Dielectric permittivity of PbMg1/3Nb2/3O3 (PMN) relaxor was investigated as a function of DC bias and AC driving field. In single crystals, DC and AC field effects exhibited very different behavior, including anisotropy and sign of the effect. It was shown ...
The evolution of switching polarization (P-r(s)) suppression, in Pb(Zr,Ti)O-3 films, induced by two different electric treatments is addressed in terms of the nonlinear dielectric response. The ac electric field dependence of dielectric permittivity was co ...
It is shown that the effects of large de bias and ac driving fields on the dielectric permittivity of single crystals of PbMg1/3Nb2/3O3 (PMN) relaxer ferroelectric exhibit very different behavior, including anisotropy and sign of the effect, which is trace ...
Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive ...
Through the use of relations analogous to that of the Rayleigh law, it is demonstrated that the ac electric field dependence of the permittivity of ferroelectric thin films can be described. It is further shown that both reversible and irreversible compone ...