Dynamics of domain walls are among the main features that control strain mechanisms in ferroic materials. Here, we demonstrate that the domain-wall-controlled piezoelectric behaviour in multiferroic BiFeO3 is distinct from that reported in classical ferroe ...
Piezoelectric ceramics generate strain through the intrinsic piezoelectric effect, the motion of ferroelectric domain walls, or through field-induced phase transitions. The enhanced piezoelectric properties observed in morphotropic solid solutions arise fr ...
Donor doping is commonly applied for softening of the piezoelectric and dielectric properties and facilitation of polarization switching in the ubiquitous Pb(Zr,Ti)O-3 [PZT] ceramics. The origin of the donor-dopant effects is not entirely clear. (Pb,Ba)ZrO ...
The results of recent studies of domain walls and their interaction with defects in BaTiO3, Pb(Zr, Ti)O-3, and BiFeO3 are discussed. The studies reveal why donor- and acceptor-doped Pb(Zr, Ti)O-3 behave differently, what is the role of stationary charged d ...
The high Curie temperature (T-C similar to 825 degrees C) of BiFeO3 has made this material potentially attractive for the development of high-T-C piezoelectric ceramics. Despite significant advances in the search of new BiFeO3-based compositions, the piezo ...
The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...
Oxygen octahedra tilting is a common structural phenomenon in perovskites and has been subject of intensive studies, particularly in rhombohedral Pb(Zr,Ti)O3 (PZT). Early reports suggest that the tilted octahedra may strongly affect the domain switching be ...
In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was trea ...
The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...
Since the discovery of a high piezoelectric response in AlScN by Akiyama and coworkers in 2009, a number of works of other groups confirmed the large increase of piezoelectricity when partially substituting Al cations by Sc cations, as long as the alloy gr ...
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