Comparison of DC and AC field effects on dielectric properties of lead magnesium niobate relaxor: Study of single crystals and ceramics
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Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive ...
Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from alkoxide-based solution precursors. The influence of different seeding layers and chemical solution on the microstructures is shown. Dielectric, electrostrictive, and piezoelectric prope ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
The non-linear dielectric properties of single crystals of PbMg1/3Nb2/3O3 relaxer ferroelectric were investigated experimentally by using measurements of the dielectric permittivity of this material as a function of the DC bias and the AC driving fields. T ...
Quasi-amorphous BaTiO3 thin films (see Figure) represent a polar ionic solid without spatial periodicity. Most probably, polarity of the quasi-amorphous BaTiO3 is associated with directional ordering of crystal motifs formed in the steep temperature gradie ...
For the first time this paper presents strip lines fabricated using SU-8 as the dielectric material. It shows the complete fabrication process of micromachined strip lines with a total height of 35.5 um as well as their characterization by on-wafer S-param ...
It is shown that the effects of large de bias and ac driving fields on the dielectric permittivity of single crystals of PbMg1/3Nb2/3O3 (PMN) relaxer ferroelectric exhibit very different behavior, including anisotropy and sign of the effect, which is trace ...
The contribution of domain walls to the dielectric permittivity of ferroelectrics is customarily explained by the model of locally pinned walls. Here we analyze the complementary case and calculate wall contribution to permittivity of a sample in which 180 ...
Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 Angstrom down to the atomic sc ...