Electromechanical properties of SrBi2Ta2O9 thin films
Publications associées (32)
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Radio frequency (RF) filters based on bulk acoustic wave resonances in piezoelectric thin films have become indispensable components in mobile communications. The currently used material, AlN, exhibits many excellent properties for this purpose. However, i ...
EPFL2009
The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...
EPFL2010
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Let {X(t), t is an element of R-N} be a fractional Brownian motion in R-d of index H. If L(0,I) is the local time of X at 0 on the interval I subset of R-N, then there exists a positive finite constant c(=c(N,d,H)) such that ...
Springer US2011
Former PhD students, post-docs and junior researchers of the Section de chimie et biochimie now holding positions at different universities and private companies remember the time they spent in Geneva and give an account of how this has set off and influen ...
2009
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The k-set-agreement problem consists for a set of n processes to agree on less than k among n possibly different Values, each initially known to only one process. The problem is at the heart of distributed computing and generalizes the celebrated consensus ...
This paper describes the design and semi-automated generation of a MOS current-mode logic standard cell library. A set of generic components implementing a wide range of combinational and sequential functions is proposed. The layout of the generic componen ...
The converse piezoelectric response of Pb(ZrxTi1−x)O3 ceramics is investigated as a function of material composition. The effects of the crystallographic phase and different dopants on piezoelectric nonlinearity are separately examined. For a linear depend ...
New entrants in postal markets usually set up delivery networks by concentrating on urban areas and large business customers. This implies that they operate their network highly centralized - at least in early phases of entrance. ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
Relaxor-ferroelectric single crystals PZN-xPT [(1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3] and PMN-xPT [(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3] continue to attract much interest due to their anomalously large piezoelectric properties (d33 > 2000 pm/V; k33 > 90%) when poled ("do ...
